n-type Polycrystalline Si Thick Films Deposited on SiNx-coated Metallurgical Grade Si Substrates

被引：0
作者：
Zhang, Hongliang [1 ]
Zhu, Liqiang [1 ]
Guo, Liqiang [1 ]
Liu, Yanghui [1 ]
Wan, Qing [1 ]
机构：
[1] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China
来源：
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY | 2015年 / 31卷 / 01期
基金：
中国国家自然科学基金;
关键词：
Thermal chemical vapor deposition; Metallurgical grade Si; Polycrystalline silicon (poly-Si) thick films; Phosphorus diffusion; SILICON SOLAR-CELLS; CRYSTALLINE SILICON; THERMAL CVD; ION-IMPLANTATION; POLYSILICON; DIFFUSION; TEMPERATURE; EPITAXY; GLASS;
D O I：
10.1016/j.jmst.2014.04.012
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
For photovoltaic applications, low-cost SiNx-coated metallurgical grade silicon (MG-Si) wafers were used as substrates for polycrystalline silicon (poly-Si) thick films deposition at temperatures ranging from 640 to 880 degrees C by thermal chemical vapor deposition. X-ray diffraction and Raman results indicated that high-quality poly-Si thick films were deposited at 880 degrees C. To obtain n-type poly-Si, the as-deposited poly-Si films were annealed at 880 degrees C capped with a phosphosilicate glass. Electrical properties of the n-type poly-Si thick films were investigated by four-probe and Hall measurements. The carrier concentration and electron mobility of the n-type poly-Si film was estimated to be 1.7 x 10(19) cm(-3) and 68.1 cm(2) V-1 s(-1), respectively. High-quality poly-Si thick films deposited on MG-Si wafers are very promising for photovoltaic applications.
引用
收藏
页码：65 / 69
页数：5
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