Effects of ultrathin AlAs interfacial layer on the structure and optical properties of GaInP epilayer grown on germanium

被引：3
作者：
Jia, S. P. [1 ,2 ]
Chen, G. F. [1 ]
He, W. [2 ,3 ]
Dai, P. [2 ]
Chen, J. X. [2 ]
Lu, S. L. [2 ]
Yang, H. [2 ]
机构：
[1] Hebei Univ Technol, Sch Mat & Engn, Key Lab New Type Funct Mat Hebei Prov, Tianjin 300130, Peoples R China
[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China
[3] Chinese Peoples Armed Police Force Acad, Dept Teaching Basic Courses, Langfang 065000, Hebei Province, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2014年 / 317卷
基金：
中国国家自然科学基金;
关键词：
Ge/GaInP; Interfacial layer; Diffusion; Degree of order; SURFACE-MORPHOLOGY; RAMAN-SCATTERING; SOLAR-CELLS; GE; GAAS; PHOTOLUMINESCENCE; STM;
D O I：
10.1016/j.apsusc.2014.09.013
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Structure and optical properties of GaInP epilayer with the ultrathin interfacial layers grown on germanium by metal-organic vapor-phase epitaxy (MOVPE) were characterized by high resolution transmission electron microscopy (HRTEM), photoluminescence (PL), Raman as well as surface morphology measurement. A five angstroms (5 A) AlAs interfacial layer results in the decrease of PL intensity arising from the emission of [Ge-(Ga,Ge-In) - V-(Ga,V-In)]complex. With the incorporation of AlAs interfacial layer, an increased ordered degree of GaInP epilayer is observed. On the basis of the combination of step-terrace-reconstruction (STR) mode with the dimer-induced-stress model, a CuPt-B type ordering of GaInP which is related to AlAs reconstruction with 2x periodicity process is proposed to explain this effect. Long range order occurs as a consequence of the minimization of the strain energy with increased interfacial layer thickness from 5 A to 5 nm. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：828 / 832
页数：5
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