Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition

被引：4

作者：

Wu ChaoMin ^{[1
,2
]}

Shang JingZhi ^{[1
,2
]}

Zhang BaoPing ^{[1
,2
,3
]}

Zhang JiangYong ^{[1
,2
,4
]}

Yu JinZhong ^{[1
,2
,4
]}

Wang QiMing ^{[1
,2
,4
]}

机构：

[1] Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China

[2] Xiamen Univ, Semicond Photon Res Ctr, Xiamen 361005, Peoples R China

[3] Xiamen Univ, Pen Tung Sah Micro Nano Technol Res Ctr, Xiamen 361005, Peoples R China

[4] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

来源：

SCIENCE CHINA-TECHNOLOGICAL SCIENCES | 2010年 / 53卷 / 02期

关键词：

MOCVD; DBR; high-reflectivity; nitride;

D O I：

10.1007/s11431-010-0037-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We studied the impact of the thickness of GaN buffer layer on the properties of distributed Bragg reflector (DBR) grown by metalorganic chemical vapor deposition (MOCVD). The samples were characterized by using metallographic microscope, transmission electron microscope (TEM), atomic force microscopy (AFM), X-ray diffractometer (XRD) and spectrophotometer. The results show that the thickness of the GaN buffer layer can significantly affect the properties of the DBR structure and there is an optimal thickness of the GaN buffer layer. This work would be helpful for the growth of high quality DBR structures.

引用

页码：313 / 316

页数：4

共 11 条

[1] Blue-green optically pumped GaN-based vertical cavity surface emitting laser [J].

Cai, L. -E. ;

Zhang, J. -Y. ;

Zhang, B. -P. ;

Li, S. -Q. ;

Wang, D. -X. ;

Shang, J. -Z. ;

Lin, F. ;

Lin, K. -C. ;

Yu, J. -Z. ;

Wang, Q. -M. .

ELECTRONICS LETTERS, 2008, 44 (16) :972-974

[2] Lattice-matched distributed Bragg reflectors for nitride-based vertical cavity surface emitting lasers [J].

Feltin, E ;

Butté, R ;

Carlin, JF ;

Dorsaz, J ;

Grandjean, N ;

Ilegems, M .

ELECTRONICS LETTERS, 2005, 41 (02) :94-95

[3] Hybrid nitride microcavity using crack-free highly reflective AlN/GaN and Ta2O5/SiO2 distributed Bragg mirrors [J].

Huang, G. S. ;

Chen, Hou-Guang ;

Chen, J.-R. ;

Lu, T. C. ;

Kuo, H. C. ;

Wang, S. C. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 204 (06) :1977-1981

[4]

LU TC, 2008, APPL PHYS LETT, V92

[5] The influence of mobility unbalance on GaN based vertical cavity surface emitting lasers [J].

Petrolati, E. ;

Di Carlo, A. .

APPLIED PHYSICS LETTERS, 2008, 92 (15)

[6] Room temperature lasing at blue wavelengths in gallium nitride microcavities [J].

Someya, T ;

Werner, R ;

Forchel, A ;

Catalano, M ;

Cingolani, R ;

Arakawa, Y .

SCIENCE, 1999, 285 (5435) :1905-1906

[7] A quasicontinuous wave, optically pumped violet vertical cavity surface emitting laser [J].

Song, YK ;

Zhou, H ;

Diagne, M ;

Nurmikko, AV ;

Schneider, RP ;

Kuo, CP ;

Krames, MR ;

Kern, RS ;

Carter-Coman, C ;

Kish, FA .

APPLIED PHYSICS LETTERS, 2000, 76 (13) :1662-1664

[8]

TAKEHIKO T, 2003, APPL PHYS LETT, V83, P830

[9]

TOHRU H, 1995, JPN J APPL PHYS, V34, P3527

[10] MOCVD growth of AlN/GaN DBR structures under various ambient conditions [J].

Yao, HH ;

Lin, CF ;

Kuo, HC ;

Wang, SC .

JOURNAL OF CRYSTAL GROWTH, 2004, 262 (1-4) :151-156

← 1 2 →