Physical and chemical characterization of combinatorial metal gate electrode Ta-C-N library film

被引：7

作者：

Chang, K. -S. ^{[1
,2
]}

Green, M. L. ^{[1
]}

Levin, I. ^{[1
]}

Hattrick-Simpers, J. R. ^{[1
]}

Jaye, C. ^{[1
]}

Fischer, D. A. ^{[1
]}

Takeuchi, I. ^{[2
]}

De Gendt, S. ^{[3
,4
]}

机构：

[1] NIST, Gaithersburg, MD 20899 USA

[2] Univ Maryland, Dept Mat Sci & Engn, College Pk, MD 20742 USA

[3] IMEC, B-3001 Louvain, Belgium

[4] Katholieke Univ Leuven, Dept Chem, B-3000 Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 19期

关键词：

carbon compounds; elemental semiconductors; hafnium compounds; high-k dielectric thin films; MIS structures; silicon; silicon compounds; sputter deposition; tantalum compounds; thermal stability; transmission electron microscopy; X-ray diffraction; X-ray fluorescence analysis; DIELECTRICS;

D O I：

10.1063/1.3428788

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper reports comprehensive structural and chemical analyses for the combinatorial Ta-C-N/HfO2 system, crucial data for understanding the electrical properties of Ta-C-N/HfO2. Combinatorial Ta-C-N "library" (composition spread) films were deposited by magnetron sputtering. Electron probe wavelength dispersive spectroscopy and x-ray fluorescence-yield near-edge spectroscopy were used to quantitatively determine the composition across these films. Scanning x-ray microdiffractometry determined that a solid solution of Ta(C,N)(x) forms and extends to compositions (0.3 <= Ta <= 0.5 and 0.57 <= Ta <= 0.67) that were previously unknown. The thermal stability of the Ta-C-N/HfO2 library was studied using high resolution transmission electron microscopy, which shows Ta-C-N/HfO2/SiO2/Si exhibiting good thermal stability up to 950 degrees C. (C) 2010 American Institute of Physics. [doi:10.1063/1.3428788]

引用

页数：3

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