Two high-speed optical front-ends with integrated photodiodes in standard 0.18μm CMOS

被引：7

作者：

Hermans, C ^{[1
]}

Leroux, P ^{[1
]}

Steyaert, M ^{[1
]}

机构：

[1] Katholieke Univ Leuven, MICAS, ESAT, B-3001 Louvain, Belgium

来源：

ESSCIRC 2004: PROCEEDINGS OF THE 30TH EUROPEAN SOLID-STATE CIRCUITS CONFERENCE | 2004年

关键词：

D O I：

10.1109/ESSCIR.2004.1356671

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two optical front-ends implemented in a standard 0.18mum CMOS technology are presented. They differ mainly in layout topology of the photodiode. The front-end with classical n-well diode achieves a bitrate of 300Mbit/s. At an input power of -8dBm, the BER is 2 (.) 10(-10). The front-end with differential n-well diode outperforms the classical n-well topology and reaches bitrates up to 500Mbit/s. At this speed, an input power of -8dBm is sufficient to have a BER of 3(.)10(-10). Both front-ends consume only 17mW.

引用

页码：275 / 278

页数：4

共 7 条

[1] 2 NOVEL FULLY COMPLEMENTARY SELF-BIASED CMOS DIFFERENTIAL-AMPLIFIERS
BAZES, M
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1991, 26 (02) : 165 - 168
[2] A 0.18-μm CMOS 3.5-Gb/s continuous-time adaptive cable equalizer using enhanced low-frequency gain control method
Choi, JS
Hwang, MS
Jeong, DK
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2004, 39 (03) : 419 - 425
[3] DEJONG GW, 2002, IEEE ISSCC, P362
[4] High-sensitivity BiCMOS, OEIC for optical storage systems
Kieschnick, K
Zimmermann, H
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2003, 38 (04) : 579 - 584
[5] RADOVANOVIC S, 2004, IEEE ISSCC, P472
[6] Asynchronous 250-mb/s optical receivers with integrated detector in standard CMOS technology for optocoupler applications
Rooman, C
Coppée, D
Kuijk, M
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2000, 35 (07) : 953 - 958
[7] 1 Gbit/s CMOS photoreceiver with integrated detector operating at 850 nm
Woodward, TK
Krishnamoorthy, AV
[J]. ELECTRONICS LETTERS, 1998, 34 (12) : 1252 - 1253

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