[1] Inst Chem & Chem Technol SB RAS, Krasnoyarsk, Russia
[2] Siberian Fed Univ, Krasnoyarsk, Russia
[3] Krasnoyarsk Sci Ctr SB RAS, Fed Res Ctr, Krasnoyarsk, Russia
[4] Kirensky Inst Phys SB RAS, Krasnoyarsk, Russia
来源:
JOURNAL OF SIBERIAN FEDERAL UNIVERSITY-CHEMISTRY
|
2021年
/
14卷
/
01期
基金:
俄罗斯基础研究基金会;
关键词:
films;
indium oxide;
indium tin oxide;
anion resin exchange synthesis;
ITO THIN-FILMS;
ELECTRICAL-PROPERTIES;
DEPOSITION;
D O I:
10.17516/1998-2836-0215
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
In the work, sedimentation-stable sols of indium (III) and tin (IV) hydroxides were obtained by the Anion Resin Exchange Precipitation, which consists of the exchange reaction between the OH ions of the anion exchange resin and the anions of metal-containing solutions. The synthesized hydrosols were used to obtain conducting films of indium (III) In2O3 oxide and indium oxide doped with Tin In2O3: Sn, with a surface resistance of 4 kOhm/sq, thicknesses of 200-500 urn and a transparency of more than 85 %. The modes of applying precursors to glass substrates by the modified spray method and centrifugation method are selected. Films were studied using XRD, SEM, optical microscopy and spectrophotometry.