Very high quality p-type AlxGa1-xN/GaN superlattice

被引：8

作者：

Yasan, A ^{[1
]}

Razeghi, M ^{[1
]}

机构：

[1] Northwestern Univ, Dept Elect & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USA

来源：

SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 02期

关键词：

GaN; AlGaN; superlattice; p-type; Hall effect measurement; admittance spectroscopy; polarization; piezoelectric;

D O I：

10.1016/S0038-1101(02)00211-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Very high quality p-type AlxGa1-xN/GaN superlattice has been achieved through optimization of Mg flow and period of superlattice. Theoretical model was used to optimize the structure of superlattice by choosing suitable Al compositions and superlattice periods. The experiments show that for x = 0.26, the resistivity is as low as 0.19 Omega cm and hole concentration is as high as 4.2 x 10(18) cm(-3), the highest values ever reported for p-type AlGaN/GaN superlattices. Hall effect measurement and admittance spectroscopy on the samples confirm the high quality of the superlattices. The activation energy calculated for p-type GaN and p-type A(0.1)Ga(0.9)N/GaN superlattice is estimated to be similar to125 and 3 meV respectively. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：303 / 306

页数：4

共 4 条

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