Effects of Mn doping on the domain structure of bismuth titanate single crystals

被引：0
|
作者：
Hara, H
Noguchi, Y
Miyayama, M
机构：
[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan
[2] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama, Japan
来源：
ELECTROCERAMICS IN JAPAN VII | 2004年 / 269卷
关键词：
bismuth layer-structured ferroelectrics; bismuth titanate; manganese doping; domain structure;
D O I：
10.4028/www.scientific.net/KEM.269.27
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The effects of Mn doping on the crystal structure and domain configuration of ferroelectric bismuth titanate were investigated using powder samples and single crystals. With increasing Mn content (x), the lattice parameter a, b and unit-cell volume increased while c kept almost constant. Optical micrograph observations on the single crystals showed a striped 90-deg domain structure in the a-b plane, and a significant change in the domain structure by Mn doping was not found for the 90-deg domain structure. Piezoelectric-force microscope investigations indicated that Mn doping resulted in a higher density of 180-deg domain walls in the 90-deg domain structure.
引用
收藏
页码：27 / 30
页数：4
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