Bias-selectable dual-band mid-/long-wavelength infrared photodetectors based on InAs/InAs1-xSbx type-II superlattices

被引：84

作者：

Haddadi, A. ^{[1
]}

Chevallier, R. ^{[1
]}

Chen, G. ^{[1
]}

Hoang, A. M. ^{[1
]}

Razeghi, M. ^{[1
]}

机构：

[1] Northwestern Univ, Dept Elect Engn & Comp Sci, Ctr Quantum Devices, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 01期

关键词：

D O I：

10.1063/1.4905565

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A high performance bias-selectable mid-/long-wavelength infrared photodetector based on InAs/InAs1-xSbx type-II superlattices on GaSb substrate has been demonstrated. The mid- and long-wavelength channels' 50% cut-off wavelengths were similar to 5.1 and similar to 9.5 mu m at 77K. The mid-wavelength channel exhibited a quantum efficiency of 45% at 100mV bias voltage under front-side illumination and without any anti-reflection coating. With a dark current density of 1 x 10(-7) A/cm(2) under 100mV applied bias, the mid-wavelength channel exhibited a specific detectivity of 8.2 x 10(12) cm.root Hz/W at 77K. The long-wavelength channel exhibited a quantum efficiency of 40%, a dark current density of 5.7 x 10(-4) A/cm(2) under -150 mV applied bias at 77K, providing a specific detectivity value of 1.64 x 10(11) cm.root Hz/W. (C) 2015 AIP Publishing LLC.

引用

页数：4

共 15 条

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