Effect of crystal orientation on ohmic contact formation for n-type gallium nitride

被引：0

作者：

Kimura, Kota ^{[1
]}

Halil, Aiman bin Mohd ^{[1
]}

Maeda, Masakatsu ^{[2
]}

Takahashi, Yasuo ^{[2
]}

机构：

[1] Osaka Univ, Grad Sch Engn, 2-1 Yamadaoka, Suita, Osaka 5650871, Japan

[2] Osaka Univ, Joining & Welding Res Inst, Ibaraki 5670047, Japan

来源：

INTERNATIONAL SYMPOSIUM ON INTERFACIAL JOINING AND SURFACE TECHNOLOGY (IJST2013) | 2014年 / 61卷

关键词：

D O I：

10.1088/1757-899X/61/1/012033

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The present paper describes the influence of surface orientation of n-type GaN on the electrical properties and the interfacial reaction between GaN and Ti during annealing. Although the contact formed on (0001) Ga-face of GaN performs the highest electrical conductance in the as-deposited state, the conductance deteriorates significantly by annealing even at a low temperature of 773 K. A considerable amount of Ti-Ga intermetallic compounds is formed at the deteriorated interfaces, to which the deterioration is attributed.

引用

页数：5

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