Quantum Confinement by an Order-Disorder Boundary in Nanocrystalline Silicon

被引：23

作者：

Bagolini, L. ^{[1
,2
]}

Mattoni, A. ^{[2
]}

Fugallo, G. ^{[3
]}

Colombo, L. ^{[2
,3
]}

Poliani, E. ^{[4
,5
]}

Sanguinetti, S. ^{[4
,5
]}

Grilli, E. ^{[4
,5
]}

机构：

[1] Univ Roma La Sapienza, Dipartimento Energet, I-00161 Rome, Italy

[2] CNR, IOM, Unita SLACS, I-09042 Monserrato, Ca, Italy

[3] Univ Cagliari, Dipartimento Fis, I-09042 Monserrato, Ca, Italy

[4] Univ Milano Bicocca, L NESS, I-20125 Milan, Italy

[5] Univ Milano Bicocca, Dipartimento Sci Mat, I-20125 Milan, Italy

来源：

PHYSICAL REVIEW LETTERS | 2010年 / 104卷 / 17期

关键词：

AMORPHOUS-SILICON; ELECTRONIC-STRUCTURE; SI NANOCRYSTALS; LIGHT-EMISSION; FILMS; PHOTOLUMINESCENCE; SEMICONDUCTORS; LUMINESCENCE; CRYSTALLINE; DEPENDENCE;

D O I：

10.1103/PhysRevLett.104.176803

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We predict theoretically and show experimentally the occurrence of quantum confinement in hydrogenated nanocrystalline silicon. We prove that only valence states ( positively charged carriers) are confined effectively within the nanograins. The emission associated to confined states is verified by photoluminescence experiments on nanocrystalline samples with controlled grain size. According to the present study, we propose nanocrystalline silicon as a promising material for oxygen-free optoelectronics, silicon-based memories and photovoltaics.

引用

页数：4

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