Atomic/Molecular Layer Deposition for Designer's Functional Metal-Organic Materials

被引:52
作者
Multia, Jenna [1 ]
Karppinen, Maarit [1 ]
机构
[1] Aalto Univ, Dept Chem & Mat Sci, FI-00076 Aalto, Finland
基金
芬兰科学院; 欧洲研究理事会;
关键词
atomic layer deposition; molecular layer deposition (ALD; MLD); crystalline metal-organic thin films; metal-organic materials; INORGANIC HYBRID MATERIALS; THIN-FILM STRUCTURES; HIGHLY LUMINESCENT MONOLAYERS; CHEMICAL-VAPOR-DEPOSITION; LITHIUM-SULFUR BATTERIES; MODIFIED 5A ZEOLITE; LI-S BATTERIES; IN-SITU; COORDINATION POLYMER; THERMAL-CONDUCTIVITY;
D O I
10.1002/admi.202200210
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Atomic layer deposition (ALD) for high-quality conformal inorganic thin films is one of the cornerstones of modern microelectronics, while molecular layer deposition (MLD) is its less-exploited counterpart for purely organic thin films. Currently, the hybrid of these two techniques, i.e., ALD/MLD, is strongly emerging as a state-of-the-art gas-phase route for designer's metal-organic thin films, e.g., for the next-generation energy technologies. The ALD/MLD literature comprises nearly 300 original journal papers covering most of the alkali and alkaline earth metals, 3d transition metals, and lanthanides as the metal component and a variety of aliphatic, aromatic, and natural organic components. Some of these ALD/MLD processes yield in situ crystalline coordination-polymer- or metal-organic-framework-like structures. Another attractive aspect is that many of the metal-organics realized through ALD/MLD are fundamentally new materials, and even unaccessible through conventional synthesis. Here, the current state of research in the field is presented, by i) providing a comprehensive account of the ALD/MLD processes so far developed, ii) addressing the constraints/possibilities for growing in situ crystalline metal-organic films, iii) highlighting some intriguing ALD/MLD materials and their application potential, and iv) making a brief outlook to the future perspectives and challenges in the field.
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页数:39
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