Sensitivity of silicon nanowires in biosensor applications

被引：8

作者：

Elfstrom, Niklas ^{[1
]}

Linnros, Jan ^{[1
]}

机构：

[1] Royal Inst Technol, Lab Mat & Semicond Phys, SE-16440 Stockholm, Sweden

来源：

PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY | 2008年 / 100卷

关键词：

D O I：

10.1088/1742-6596/100/5/052042

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A 2-dimensional simulation tool was designed to investigate the threshold voltage behaviour for a silicon nanowire constructed in a top down approach on silicon on insulator (SOI) material. The simulation shows, assuming a positive charge of +1.10(11) cm(-2) between the silicon/silicon dioxide interface and negatively charged surface states on top of the nanowire that the threshold voltage increases with decreasing height of the nanowire.

引用

页数：4

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