Metal miaration in epoxy encapsulated ECL devices

被引:6
作者
Zhang, C [1 ]
Yalamanchili, P [1 ]
Al-Sheikhley, M [1 ]
Christou, A [1 ]
机构
[1] Univ Maryland, Mat Sci & Engn & Reliabil Engn Ctr, College Pk, MD 20742 USA
关键词
D O I
10.1016/j.microrel.2004.07.021
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The present investigation identifies migrative resistive shorts as the primary mode of failure for ECL power devices from field failures. In the present investigation, a number of analytical tools have been applied in order to identify and characterize the failure mechanism. These techniques included environmental scanning acoustic microscopy (ESEM), energy dispersive x-ray spectroscopy (EDX), scanning acoustic microscopy (C-SEM). Devices which were analyzed were selected so as to compare control, and untested devices with field returns which had failed as a result of either shorts between bond pads or the presence of leakage paths between bond pads. The failed devices from field returns were in two categories: returns with no destructive analysis performed, and returns with destructive analysis. Hence we were able to reach conclusions on the effect of destructive analysis on disturbing the failure site. We also performed accelerated stress testing on devices from a single date lot so as to attain projected mean time to failure and hence develop a statistically valid reliability model. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1323 / 1330
页数:8
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