A novel 4H-SiC MESFET with P-type doping zone and recessed buffer layer

被引：4

作者：

Jia, Hujun ^{[1
]}

Zhang, Yunfan ^{[1
]}

Zhu, Shunwei ^{[1
]}

Wang, Huan ^{[1
]}

Wang, Xiaoyu ^{[1
]}

Liang, Hua ^{[1
]}

Yang, Yintang ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Xian 710071, Peoples R China

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2022年 / 144卷

基金：

中国国家自然科学基金;

关键词：

4H-SiC MESFET; Breakdown voltage; P-type doping region; Maximum output power density; HIGH-POWER; GATE; FABRICATION; PERFORMANCE;

D O I：

10.1016/j.mssp.2022.106615

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Based on the double recessed 4H-SiC metal semiconductor field effect transistor (DR-MESFET) structure, a new 4H-SiC MESFET with p-type doping zone in drain drift region and recessed buffer layer under the source drift region (PDRB-MESFET) is proposed in this paper. The simulation results show that the breakdown voltage of this novel structure is improved by 63.76% compared with that of DR-MESFET. Thus, the maximum output power density of the device is increased by 72.85%. As for RF, the cutoff frequency decreases by 4.42% due to the increase of gate source capacitance, and RF performance deteriorates slightly. But in general, it is meaningful to exchange a slight decline in RF performance for a significant improvement in DC performance. The length and width of the p-type doping region are optimized and the optimal size of the p-type doping region is obtained.

引用

页数：6

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