Giant enhancement of polariton relaxation in semiconductor microcavities by polariton-free carrier interaction: Experimental evidence and theory

被引:34
作者
Tartakovskii, AI [1 ]
Krizhanovskii, DN
Malpuech, G
Emam-Ismail, M
Chernenko, AV
Kavokin, AV
Kulakovskii, VD
Skolnick, MS
Roberts, JS
机构
[1] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Russia
[2] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
[3] Univ Southampton, Dept Phys & Astron, Southampton SO17 1BJ, Hants, England
[4] Univ Clermont Ferrand, CNRS, LASMEA, F-63177 Aubiere, France
[5] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
来源
PHYSICAL REVIEW B | 2003年 / 67卷 / 16期
关键词
D O I
10.1103/PhysRevB.67.165302
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Very large changes in the population distributions of microcavity polaritons are reported under conditions of simultaneous resonant and nonresonant excitation. The strong relaxation bottleneck, which results in weak emission from the lower polariton branch for resonant excitation alone, is fully suppressed if additional nonresonant excitation is employed. By comparison with theory, the massive enhancement of the polariton relaxation is shown to arise from scattering of polaritons by free carriers, present in quantum wells due to residual doping, which are then heated by the nonresonant excitation.
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页数:5
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