Magnetic field mixing and splitting of bright and dark excitons in monolayer MoSe2

被引:59
作者
Lu, Zhengguang [1 ,2 ]
Rhodes, Daniel [3 ]
Li, Zhipeng [4 ,5 ]
Dinh Van Tuan [6 ]
Jiang, Yuxuan [1 ]
Ludwig, Jonathan [1 ,2 ]
Jiang, Zhigang [8 ]
Lian, Zhen [4 ]
Shi, Su-Fei [4 ]
Hone, James [3 ]
Dery, Hanan [6 ,7 ]
Smirnov, Dmitry [1 ]
机构
[1] Natl High Magnet Field Lab, Tallahassee, FL 32310 USA
[2] Florida State Univ, Dept Phys, Tallahassee, FL 32306 USA
[3] Columbia Univ, Dept Mech Engn, New York, NY 10027 USA
[4] Rensselaer Polytech Inst, Dept Chem & Biol Engn, Troy, NY 12180 USA
[5] Shanghai Jiao Tong Univ, Sch Chem & Chem Engn, Shanghai 200240, Peoples R China
[6] Univ Rochester, Dept Elect & Comp Engn, Rochester, NY 14627 USA
[7] Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA
[8] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA
关键词
two-dimensional materials; transition metal dichalcogenide monolayers; molybdenum diselenide; dark excitons; electronic and optical properties;
D O I
10.1088/2053-1583/ab5614
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Monolayers of semiconducting transition metal dichalcogenides (TMDCs) with unique spin-valley contrasting properties and remarkably strong excitonic effects continue to be a subject of intense research interests. These model 2D semiconductors feature two fundamental intravalley excitons species?optically accessible ?bright? excitons with anti-parallel spins and optically inactive ?dark? excitons with parallel spins. For applications exploiting radiative recombination of bright excitons or long lifetime dark excitons, it is essential to understand the radiative character of the exciton ground state and establish the energy separation between the lowest energy bright and dark excitons. Here, we report a direct spectroscopic measure of dark excitons in monolayer MoSe2 encapsulated in hexagonal boron nitride. By applying strong in-plane magnetic field, we induce mixing and splitting of bright and dark exciton branches, which enables an accurate spectroscopic determination of their energies. We confirm the bright character of the exciton ground state separated by a 1.5 meV gap from the higher energy dark exciton state, much smaller compared to the previous theoretical expectations. These findings provide critical information for further improvement of the accurate theoretical description of TMDCs electronic structure.
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页数:7
相关论文
共 36 条
[1]  
Ajayi O. A., 2017, 2D Mater, V4, DOI DOI 10.1088/2053-1583/AA6AA1
[2]  
BYCHKOV YA, 1984, JETP LETT+, V39, P78
[3]   Valley-selective circular dichroism of monolayer molybdenum disulphide [J].
Cao, Ting ;
Wang, Gang ;
Han, Wenpeng ;
Ye, Huiqi ;
Zhu, Chuanrui ;
Shi, Junren ;
Niu, Qian ;
Tan, Pingheng ;
Wang, Enge ;
Liu, Baoli ;
Feng, Ji .
NATURE COMMUNICATIONS, 2012, 3
[4]   Dark excitations in monolayer transition metal dichalcogenides [J].
Deilmann, Thorsten ;
Thygesen, Kristian Sommer .
PHYSICAL REVIEW B, 2017, 96 (20)
[5]   Polarization analysis of excitons in monolayer and bilayer transition-metal dichalcogenides [J].
Dery, Hanan ;
Song, Yang .
PHYSICAL REVIEW B, 2015, 92 (12)
[6]   Probing many-body interactions in monolayer transition-metal dichalcogenides [J].
Dinh Van Tuan ;
Scharf, Benedikt ;
Wang, Zefang ;
Shan, Jie ;
Mak, Kin Fai ;
Zutic, Igor ;
Dery, Hanan .
PHYSICAL REVIEW B, 2019, 99 (08)
[7]   Splitting between bright and dark excitons in transition metal dichalcogenide monolayers [J].
Echeverry, J. P. ;
Urbaszek, B. ;
Amand, T. ;
Marie, X. ;
Gerber, I. C. .
PHYSICAL REVIEW B, 2016, 93 (12)
[8]   Optical polarization and intervalley scattering in single layers of MoS2 and MoSe2 [J].
Kioseoglou, G. ;
Hanbicki, A. T. ;
Currie, M. ;
Friedman, A. L. ;
Jonker, B. T. .
SCIENTIFIC REPORTS, 2016, 6
[9]   Optical properties of atomically thin transition metal dichalcogenides: observations and puzzles [J].
Koperski, Maciej ;
Molas, Maciej R. ;
Arora, Ashish ;
Nogajewski, Karol ;
Slobodeniuk, Artur O. ;
Faugeras, Clement ;
Potemski, Marek .
NANOPHOTONICS, 2017, 6 (06) :1289-1308
[10]   k.p theory for two-dimensional transition metal dichalcogenide semiconductors [J].
Kormanyos, Andor ;
Burkard, Guido ;
Gmitra, Martin ;
Fabian, Jaroslav ;
Zolyomi, Viktor ;
Drummond, Neil D. ;
Fal'ko, Vladimir .
2D MATERIALS, 2015, 2 (02)