Suppression of InAs/GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer

被引：86
作者：
Ulloa, J. M.
Drouzas, I. W. D.
Koenraad, P. M.
Mowbray, D. J.
Steer, M. J.
Liu, H. Y.
Hopkinson, M.
机构：
[1] Eindhoven Univ Technol, COBRA Interuniv Res Inst, NL-5600 MB Eindhoven, Netherlands
[2] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
[3] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 21期
关键词：
D O I：
10.1063/1.2741608
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The influence of a GaAsSb capping layer on the structural properties of self-assembled InAs/GaAs quantum dots (QDs) is studied on the atomic scale by cross-sectional scanning tunneling microscopy. QDs capped with GaAs0.75Sb0.25 exhibit a full pyramidal shape and a height more than twice that of the typical GaAs-capped QDs, indicating that capping with GaAsSb suppresses dot decomposition. This behavior is most likely related to the reduced lattice mismatch between the dot and the capping layer. (c) 2007 American Institute of Physics.
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页数：3
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