Suppression of InAs/GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer

被引：87
作者：
Ulloa, J. M.
Drouzas, I. W. D.
Koenraad, P. M.
Mowbray, D. J.
Steer, M. J.
Liu, H. Y.
Hopkinson, M.
机构：
[1] Eindhoven Univ Technol, COBRA Interuniv Res Inst, NL-5600 MB Eindhoven, Netherlands
[2] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
[3] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 21期
关键词：
D O I：
10.1063/1.2741608
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The influence of a GaAsSb capping layer on the structural properties of self-assembled InAs/GaAs quantum dots (QDs) is studied on the atomic scale by cross-sectional scanning tunneling microscopy. QDs capped with GaAs0.75Sb0.25 exhibit a full pyramidal shape and a height more than twice that of the typical GaAs-capped QDs, indicating that capping with GaAsSb suppresses dot decomposition. This behavior is most likely related to the reduced lattice mismatch between the dot and the capping layer. (c) 2007 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 22 条
[1]   Long-wavelength light emission from InAs quantum dots covered by GaAsSb grown on GaAs substrates [J].
Akahane, K ;
Yamamoto, N ;
Ohtani, N .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 21 (2-4) :295-299
[2]   2.0 μm wavelength InAs quantum dashes grown on a GaAs substrate using a metamorphic buffer layer [J].
Balakrishnan, G ;
Huang, S ;
Rotter, TJ ;
Stintz, A ;
Dawson, LR ;
Malloy, KJ ;
Xu, H ;
Huffaker, DL .
APPLIED PHYSICS LETTERS, 2004, 84 (12) :2058-2060
[3]   Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy [J].
Bruls, DM ;
Vugs, JWAM ;
Koenraad, PM ;
Salemink, HWM ;
Wolter, JH ;
Hopkinson, M ;
Skolnick, MS ;
Long, F ;
Gill, SPA .
APPLIED PHYSICS LETTERS, 2002, 81 (09) :1708-1710
[4]   Electroreflectance studies of InAs quantum dots with InxGa1-xAs capping layer grown by metalorganic chemical vapor deposition -: art. no. 131917 [J].
Chang, WH ;
Chen, HY ;
Chang, HS ;
Chen, WY ;
Hsu, TM ;
Hsieh, TP ;
Chyi, JI ;
Yeh, NT .
APPLIED PHYSICS LETTERS, 2005, 86 (13) :1-3
[5]   Interplay between thermodynamics and kinetics in the capping of InAs/GaAs(001) quantum dots [J].
Costantini, G. ;
Rastelli, A. ;
Manzano, C. ;
Acosta-Diaz, P. ;
Songmuang, R. ;
Katsaros, G. ;
Schmidt, O. G. ;
Kern, K. .
PHYSICAL REVIEW LETTERS, 2006, 96 (22)
[6]   InAs/GaAs quantum dots optically active at 1.5 μm [J].
da Silva, MJ ;
Quivy, AA ;
Martini, S ;
Lamas, TE ;
da Silva, ECF ;
Leite, JR .
APPLIED PHYSICS LETTERS, 2003, 82 (16) :2646-2648
[7]   Capping process of InAs/GaAs quantum dots studied by cross-sectional scanning tunneling microscopy [J].
Gong, Q ;
Offermans, P ;
Nötzel, R ;
Koenraad, PM ;
Wolter, JH .
APPLIED PHYSICS LETTERS, 2004, 85 (23) :5697-5699
[8]   Shape and surface morphology changes during the initial stages of encapsulation of InAs/GaAs quantum dots [J].
Joyce, PB ;
Krzyzewski, TJ ;
Steans, PH ;
Bell, GR ;
Neave, JH ;
Jones, TS .
SURFACE SCIENCE, 2001, 492 (03) :345-353
[9]   Strain engineered InAs/GaAs quantum dots for 1.5 μm emitters [J].
Le Ru, EC ;
Howe, P ;
Jones, TS ;
Murray, R .
2ND INTERNATIONAL CONFERENCE ON SEMICONDUCTOR QUANTUM DOTS, 2003, :1221-1224
[10]   High performance quantum dot lasers on GaAs substrates operating in 1.5μm range [J].
Ledentsov, NN ;
Kovsh, AR ;
Zhukov, AE ;
Maleev, NA ;
Mikhrin, SS ;
Vasil'ev, AP ;
Sernenova, ES ;
Maximov, MV ;
Shernyakov, YM ;
Kryzhanovskaya, N ;
Ustinov, V ;
Bimberg, D .
ELECTRONICS LETTERS, 2003, 39 (15) :1126-1128
123