The effect of laser treatment on the morphology and structure of CdSb-Cd1-xMnxTe and CdSb-In4(Se3)1-x Te3x thin film heterojunctions

被引：5

作者：

Savchuk, A. I. ^{[1
]}

Fochuk, P. M. ^{[2
]}

Strebezhev, V. V. ^{[1
]}

Kleto, G. I. ^{[1
]}

Yuriychuk, I. M. ^{[1
]}

Khalavka, Y. B. ^{[2
]}

Obedzynskyi, Yu. K. ^{[1
]}

Strebezhev, V. M. ^{[1
]}

机构：

[1] Yuriy Fedkovych Chernivtsi Natl Univ, Dept Phys Semicond & Nanostruct, Chernovtsy, Ukraine

[2] Yuriy Fedkovych Chernivtsi Natl Univ, Dept Inorgan Chem, Chernovtsy, Ukraine

来源：

APPLIED SURFACE SCIENCE | 2017年 / 418卷

关键词：

Thin film; Heterojunction; RF sputtering; Laser; CdSb; ELECTRICAL-PROPERTIES; BARRIER STRUCTURES; IN4SE3; CDSB; CRYSTALS; DEFECTS;

D O I：

10.1016/j.apsusc.2016.11.137

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Peculiarities of heteroepitaxial growth of CdSb thin films on A(II)B(VI) and A(III)B(VI) single crystal substrates were studied by atomic-force and scanning electron microscopy. New thin film CdSb-Cd1-xMnxTe and CdSb-In-4(Ses)(1-x)Te-3x heterojunctions were obtained by high-frequency cathode sputtering of CdSb single crystal target. Laser treatment of CdSb films using millisecond YAG-laser with energy density of 0.1-4.5 j/cm(2) has been carried out in order to modify and improve their structure and phase state. Stoichiometry of composition and granular polycrystalline structure of CdSb films on Cd1-xMnxTe and In-4(Se-3)(1-x)Te-3x. substrates have been confirmed by SEM and AFM studies. A stepwise growth processes of grains were detected under laser treatment in CdSb films. Anisotropic shape of grains in CdSb films was found depending on crystallographic orientation of In4Se3 substrate surface. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：536 / 541

页数：6

共 18 条

[1]

AmzadHossain Md., 2016, VACUUM, V128, P219

[2] CdSb, ZnSb, and Cd x Zn1-x Sb low-symmetry crystals: Chemical bonding and technological aspects [J].

Ashcheulov, A. A. ;

Gutsul, I. V. ;

Manyk, O. N. ;

Manyk, T. O. ;

Marenkin, S. F. .

INORGANIC MATERIALS, 2010, 46 (06) :574-580

[3] Optical constants of InSe and In4Se3 thin films in the far infrared region [J].

Benramdane, N ;

Bouzidi, A ;

Tabet-derraz, H ;

Kebbab, Z ;

Latreche, M .

MICROELECTRONIC ENGINEERING, 2000, 51-2 :645-657

[4] ACTIVATION-ENERGY FOR COSI AND COSI2 FORMATION MEASURED DURING RAPID THERMAL ANNEALING [J].

COLGAN, EG ;

CABRAL, C ;

KOTECKI, DE .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (02) :614-619

[5] Studies of the structure of defects in In4Se3 crystals by small-angle neutron scattering [J].

Garamus, VM ;

Islamov, AK ;

Pilat, YP ;

Savchin, VP .

PHYSICS OF THE SOLID STATE, 1998, 40 (02) :223-225

[6] IR photodetectors on CdSb, In4Se3, InTe3-epitaxial barrier structures [J].

Gritsyuk, BM ;

Galochkin, OV ;

Rarenko, AI ;

Strebezhev, VM .

SIXTH INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE AND MATERIAL PROPERTIES FOR INFRARED OPTOELECTRONICS, 2003, 5065 :139-145

[7] PREPARATION AND ELECTRICAL-PROPERTIES OF CDSB THIN-FILMS [J].

KASHIWABA, Y ;

OHYA, N ;

IKEDA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (12) :1855-1861

[8] Selective migration of Cd in amorphous Cd-Sb films [J].

Kashiwaba, Y ;

Abe, H ;

Ikeda, T ;

Horie, H ;

Nakamura, M ;

Shoubuzawa, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (07) :3825-3829

[9] PREPARATION AND PROPERTIES OF CD-SB THIN-FILMS [J].

KOMATSU, M ;

MATSUDA, N ;

KASHIWABA, Y ;

SAITO, H .

MATERIALS RESEARCH BULLETIN, 1978, 13 (08) :835-840

[10] The anisotropic band structure of layered In4Se3(001) [J].

Losovyj, Ya. B. ;

Makinistian, L. ;

Albanesi, E. A. ;

Petukhov, A. G. ;

Liu, Jing ;

Galiy, P. ;

Dveriy, O. R. ;

Dowben, P. A. .

JOURNAL OF APPLIED PHYSICS, 2008, 104 (08)

← 1 2 →