Low-Noise Amplifier Design With Dual Reactive Feedback for Broadband Simultaneous Noise and Impedance Matching

被引：62

作者：

Fu, Chang-Tsung ^{[2
]}

Kuo, Chien-Nan ^{[1
]}

Taylor, Stewart S. ^{[2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Intel Corp, Intel Lab, Hillsboro, OR 97124 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2010年 / 58卷 / 04期

关键词：

Broadband input matching; capacitive feedback; low-noise amplifier (LNA); low power; noise optimized design; simultaneous noise and impedance matching (SNIM); transformer feedback; ultra-wideband (UWB); LNA; POWER;

D O I：

10.1109/TMTT.2010.2041570

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The simultaneous noise and impedance matching (SNIM) condition for a common-source amplifier is analyzed. Transistor noise parameters are derived based on the more complete hybrid-pi model, and the dominant factors jeopardizing SNIM are identified. Strategies for narrowband and broadband SNIM (BSNIM) are derived accordingly. A dual reactive feedback circuit along with an LC-ladder matching network is proposed to achieve the BSNIM. It includes a capacitive and an inductive feedback, where the former utilizes the transistor parasitic gate-to-drain capacitance and the latter is formed by transformer coupling. This circuit topology has been validated in 0.18- and 0.13-mu m CMOS technologies for a 3-11-GHz ultra-wideband (UWB) and a 2.4-5.4-GHz multistandard application, respectively. The 3-11-GHz UWB low-noise amplifier is detailed as a design example.

引用

页码：795 / 806

页数：12

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