van der Waals Heterostructures with High Accuracy Rotational Alignment

被引：583

作者：

Kim, Kyounghwan ^{[1
]}

Yankowitz, Matthew ^{[2
]}

Fallahazad, Babak ^{[1
]}

Kang, Sangwoo ^{[1
]}

Movva, Hema C. P. ^{[1
]}

Huang, Shengqiang ^{[2
]}

Larentis, Stefano ^{[1
]}

Corbet, Chris M. ^{[1
]}

Taniguchi, Takashi ^{[3
]}

Watanabe, Kenji ^{[3
]}

Banerjee, Sanjay K. ^{[1
]}

LeRoy, Brian J. ^{[2
]}

Tutuc, Emanuel ^{[1
]}

机构：

[1] Univ Texas Austin, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78758 USA

[2] Univ Arizona, Dept Phys, Tucson, AZ 85721 USA

[3] Natl Inst Mat Sci, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

来源：

NANO LETTERS | 2016年 / 16卷 / 03期

基金：

美国国家科学基金会;

关键词：

Two-dimensional; heterostructure; graphene; boron-nitride; resonant tunneling; SCANNING-TUNNELING-MICROSCOPY; BILAYER GRAPHENE; BORON-NITRIDE; DIRAC FERMIONS; SUPERLATTICES; SPECTROSCOPY; CONDUCTANCE; SURFACE;

D O I：

10.1021/acs.nanolett.5b05263

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We describe the realization of van der Waals (vdW) heterostructures with accurate rotational alignment of individual layer crystal axes. We illustrate the approach by demonstrating a Bernal-stacked bilayer graphene formed using successive transfers of monolayer graphene flakes. The Raman spectra of this artificial bilayer graphene possess a wide 2D band, which is best fit by four Lorentzians, consistent with Bernal stacking. Scanning tunneling microscopy reveals no moire pattern on the artificial bilayer graphene, and tunneling spectroscopy as a function of gate voltage reveals a constant density of states, also in agreement with Bernal, stacking. In addition, electron transport probed in dual-gated samples reveals a band gap opening as a function of transverse electric field. To illustrate the applicability of this technique to realize vdW heterostructuctures in which the functionality is critically dependent on rotational alignment, we demonstrate resonant tunneling double bilayer graphene heterostructures separated by hexagonal boron-nitride dielectric.

引用

页码：1989 / 1995

页数：7

共 31 条

[1] Resonant tunnelling and negative differential conductance in graphene transistors [J].

Britnell, L. ;

Gorbachev, R. V. ;

Geim, A. K. ;

Ponomarenko, L. A. ;

Mishchenko, A. ;

Greenaway, M. T. ;

Fromhold, T. M. ;

Novoselov, K. S. ;

Eaves, L. .

NATURE COMMUNICATIONS, 2013, 4

[2] Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers [J].

Britnell, Liam ;

Gorbachev, Roman V. ;

Jalil, Rashid ;

Belle, Branson D. ;

Schedin, Fred ;

Katsnelson, Mikhail I. ;

Eaves, Laurence ;

Morozov, Sergey V. ;

Mayorov, Alexander S. ;

Peres, Nuno M. R. ;

Castro Neto, Antonio H. ;

Leist, Jon ;

Geim, Andre K. ;

Ponomarenko, Leonid A. ;

Novoselov, Kostya S. .

NANO LETTERS, 2012, 12 (03) :1707-1710

[3] Hofstadter's butterfly and the fractal quantum Hall effect in moire superlattices [J].

Dean, C. R. ;

Wang, L. ;

Maher, P. ;

Forsythe, C. ;

Ghahari, F. ;

Gao, Y. ;

Katoch, J. ;

Ishigami, M. ;

Moon, P. ;

Koshino, M. ;

Taniguchi, T. ;

Watanabe, K. ;

Shepard, K. L. ;

Hone, J. ;

Kim, P. .

NATURE, 2013, 497 (7451) :598-602

[4] Boron nitride substrates for high-quality graphene electronics [J].

Dean, C. R. ;

Young, A. F. ;

Meric, I. ;

Lee, C. ;

Wang, L. ;

Sorgenfrei, S. ;

Watanabe, K. ;

Taniguchi, T. ;

Kim, P. ;

Shepard, K. L. ;

Hone, J. .

NATURE NANOTECHNOLOGY, 2010, 5 (10) :722-726

[5] Mapping the Dirac point in gated bilayer graphene [J].

Deshpande, A. ;

Bao, W. ;

Zhao, Z. ;

Lau, C. N. ;

LeRoy, B. J. .

APPLIED PHYSICS LETTERS, 2009, 95 (24)

[6] Graphene bilayer with a twist: Electronic structure [J].

dos Santos, J. M. B. Lopes ;

Peres, N. M. R. ;

Castro Neto, A. H. .

PHYSICAL REVIEW LETTERS, 2007, 99 (25)

[7] Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures [J].

Fallahazad, Babak ;

Lee, Kayoung ;

Kang, Sangwoo ;

Xue, Jiamin ;

Larentis, Stefano ;

Corbet, Christopher ;

Kim, Kyounghwan ;

Movva, Hema C. P. ;

Taniguchi, Takashi ;

Watanabe, Kenji ;

Banerjee, Sanjay K. ;

Tutuc, Emanuel .

NANO LETTERS, 2015, 15 (01) :428-433

[8] Raman spectrum of graphene and graphene layers [J].

Ferrari, A. C. ;

Meyer, J. C. ;

Scardaci, V. ;

Casiraghi, C. ;

Lazzeri, M. ;

Mauri, F. ;

Piscanec, S. ;

Jiang, D. ;

Novoselov, K. S. ;

Roth, S. ;

Geim, A. K. .

PHYSICAL REVIEW LETTERS, 2006, 97 (18)

[9] Van der Waals heterostructures [J].

Geim, A. K. ;

Grigorieva, I. V. .

NATURE, 2013, 499 (7459) :419-425

[10] The Role of Surface Oxygen in the Growth of Large Single-Crystal Graphene on Copper [J].

Hao, Yufeng ;

Bharathi, M. S. ;

Wang, Lei ;

Liu, Yuanyue ;

Chen, Hua ;

Nie, Shu ;

Wang, Xiaohan ;

Chou, Harry ;

Tan, Cheng ;

Fallahazad, Babak ;

Ramanarayan, H. ;

Magnuson, Carl W. ;

Tutuc, Emanuel ;

Yakobson, Boris I. ;

McCarty, Kevin F. ;

Zhang, Yong-Wei ;

Kim, Philip ;

Hone, James ;

Colombo, Luigi ;

Ruoff, Rodney S. .

SCIENCE, 2013, 342 (6159) :720-723

← 1 2 3 4 →