Aminosilane monolayer-assisted patterning of conductive poly(3,4-ethylenedioxythiophene) source/drain electrodes for bottom contact pentacene thin film transistors

被引:15
作者
Pang, Ilsun [1 ]
Kim, Hyunho [1 ]
Kim, Sungsoo [2 ]
Jeong, Kyunghoon [1 ]
Jung, Hyun Suk [1 ]
Yu, Chung-Jong [3 ]
Soh, Hoesup [1 ]
Lee, Jaegab [1 ]
机构
[1] Kookmin Univ, Sch Adv Mat Engn, Ctr Mat & Proc Self Assembly, Seoul 136702, South Korea
[2] Pai Chai Univ, Dept Nanopolymer Mat Engn, Taejon 302735, South Korea
[3] Pohang Univ Sci & Technol, Pohang Accelerator Lab, Pohang 790784, South Korea
关键词
Bottom contact OTFTs; Conducting polymer; Self-assembled monolayers; Low contact resistance; LIGHT-EMITTING-DIODES; VAPOR-PHASE POLYMERIZATION; ORGANIC TRANSISTORS; TRANSPARENT ANODE; POLYMERS; INSULATORS; CIRCUITS; DEVICES; LAYER;
D O I
10.1016/j.orgel.2009.10.001
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This paper reports the fabrication of organic thin film transistors (OTFTs) with conducting poly(3,4-ethylenedioxythiophene) (PEDOT) electrodes using a bottom-up process consisting of the selective growth of PEDOT on a pre-patterned (3-aminopropyl) trimethoxysilane (APS) monolayer. The newly developed bottom-up process produced strongly adherent, selectively and uniformly patterned PEDOT films on oxidized substrates. In addition, the PEDOT/APS double structure showed an approximately one order of magnitude lower leakage current and contact resistance than the Au/Ti electrodes. The lower leakage current was due to the additional blocking effects by APS monolayer in the PEDOT/APS structure; the lower contact resistance was attributed to the better quality of pentacene films formed on PEDOT electrodes than that of the gold electrodes. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:338 / 343
页数:6
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