Miniaturized and Actively Tunable Triple-Band Terahertz Metamaterial Absorber Using an Analogy I-Typed Resonator

被引:47
|
作者
Wang, Ben-Xin [1 ]
Xu, Chongyang [1 ]
Duan, Guiyuan [1 ]
Jiang, Jieying [1 ]
Xu, Wei [1 ]
Yang, Zhuchuang [1 ]
Wu, Yangkuan [1 ]
机构
[1] Jiangnan Univ, Sch Sci, Wuxi 214122, Jiangsu, Peoples R China
来源
NANOSCALE RESEARCH LETTERS | 2022年 / 17卷 / 01期
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
Terahertz metamaterial; Perfect absorber; Triple-band absorption; Analogy I-typed resonator; WIDE-ANGLE; PERFECT ABSORBERS; REFRACTIVE-INDEX; POLARIZATION; METASURFACE; MULTIBAND; DESIGN;
D O I
10.1186/s11671-022-03677-5
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Triple-band terahertz metamaterial absorber with design of miniaturization and compactness is presented in this work. The unit cell of the terahertz absorber is formed by an analogy I-typed resonator (a rectangular patch with two small notches) deposited on top of dielectric sheet and metallic mirror. The miniaturized structure design exhibits three discrete frequency points with near-perfect absorption at terahertz regime. The three absorption peaks could be ascribed to localized resonances of analogy I-typed resonator, while the response positions of these absorption peaks at the analogy I-typed resonator are different by analyzing the near-field patterns of these resonance peaks. Changes in structure parameters of the analogy I-typed resonator are also investigated. Simulation results revealed that the notch sizes of the rectangular patch are the key factor to form the triple-band near-perfect absorption. Further structure optimization is given to demonstrate triple-band polarization insensitive performance. Moreover, actively tunable absorption properties are realized by inserting or introducing vanadium dioxide with adjustable conductivity into the metamaterial structure. It is revealed that the insulator-metal phase transition of vanadium dioxide is the main reason for the modulation of absorption performance. Compared with previous multiple-band absorbers, the device given here has excellent features of high degrees of simplification, miniaturization, and active modulation, these are important in practical applications.
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页数:12
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