Epitaxy N-polar GaN on vicinal Sapphire substrate by MOCVD

被引：20

作者：

Li, Yangfeng ^{[1
,2
]}

Hu, Xiaotao ^{[1
,2
]}

Song, Yimeng ^{[4
]}

Su, Zhaole ^{[1
,2
]}

Wang, Wenqi ^{[1
,2
]}

Jia, Haiqiang ^{[1
,2
,3
]}

Wang, Wenxin ^{[1
,2
,3
]}

Jiang, Yang ^{[1
,2
]}

Chen, Hong ^{[1
,2
,3
]}

机构：

[1] Chinese Acad Sci, Beijing Key Lab New Energy Mat & Devices, Beijing Natl Lab Condensed Matter Phys, Key Lab Renewable Energy,Inst Phys, Beijing 100190, Peoples R China

[2] Univ Chinese Acad Sci, Ctr Mat & Optoelect Engn, Beijing 100049, Peoples R China

[3] Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China

[4] Univ Sci & Technol Beijing, Sch Math & Phys, Beijing Key Lab Magneto Photoelect Composite & In, Beijing 100083, Peoples R China

来源：

VACUUM | 2021年 / 189卷

基金：

中国国家自然科学基金;

关键词：

N-polar GaN; MOCVD; Smooth surface; HRTEM; X-ray rocking curves; Photoluminescence; GROWTH; FILMS; TEMPERATURE;

D O I：

10.1016/j.vacuum.2021.110173

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A 1-mu m thick N-polar gallium nitride (GaN) thin film has been grown on 2-inch vicinal sapphire substrate (c off 2 degrees toward m plane) by metal organic chemical vapor deposition (MOCVD). The smooth surface without any inversion domains is demonstrated by the optical microscopy, atomic force microscopy, and scanning electron microscopy. The N-polar property is confirmed by potassium hydroxide etching and the atomic layout through high-resolution transmission electron microscopy (HRTEM). The good crystalline quality is verified by X-ray rocking curves and photoluminescence.

引用

页数：6

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