Effect of Sputtering Power on the Growth of Ru films Deposited by Magnetron Sputtering

被引：7

作者：

Jhanwar, Prachi ^{[1
,2
]}

Kumar, Arvind ^{[1
]}

Verma, Seema ^{[2
]}

Rangra, K. J. ^{[1
]}

机构：

[1] Cent Elect Engn Res Inst, CSIR, Pilani 333031, Rajasthan, India

[2] Banasthali Univ, Dept Elect, Banasthali 304022, Rajasthan, India

来源：

2ND INTERNATIONAL CONFERENCE ON EMERGING TECHNOLOGIES: MICRO TO NANO 2015 (ETMN-2015) | 2016年 / 1724卷

关键词：

Sputtering. X-ray diffraction; AFM; FWHM; METAL; RUTHENIUM; SWITCH;

D O I：

10.1063/1.4945193

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Ruthenium is deposited by DC magnetron sputtering at different powers and is characterized. The effect of sputtering power on the electrical and structural properties of the film is investigated experimentally. High resolution Xray diffraction is used to characterize the microstructure of Ru films deposited on SiO2 surface. The peak (002) is more sharp and intense with full width at half maximum (MUM) of 0.379 degrees at 250W. The grain size increases with increase in sputtering power improving the crystallinity of the film The film deposited at high sputtering power also showed lower resistivity (12.40 mu Omega-cm) and higher mobility (4.82 cm(2)/V.s) as compared to the film deposited at low power. The surface morphology of the film is studied by atomic force microscopy (AFM).

引用

页数：5

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