Hot carriers in a bipolar graphene

被引：7

作者：

Balev, O. G. ^{[1
]}

Vasko, F. T. ^{[2
]}

机构：

[1] Univ Fed Amazonas, Dept Fis, BR-69077000 Manaus, Amazonas, Brazil

[2] NAS Ukraine, Inst Semicond Phys, UA-03028 Kiev, Ukraine

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 12期

关键词：

All Open Access; Green;

D O I：

10.1063/1.3431353

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hot carriers in a doped graphene under dc electric field is described taking into account the intraband energy relaxation due to acoustic phonon scattering and the interband generation-recombination transitions caused by thermal radiation. The consideration is performed for the case when the intercarrier scattering effectively establishes the quasiequilibrium electron-hole distributions, with effective temperature and concentrations of carriers. The concentration and energy balance equations are solved taking into account an interplay between weak energy relaxation and generation-recombination processes. The nonlinear conductivity is calculated for the momentum relaxation caused by the elastic scattering. The current-voltage characteristics, and the transition between bipolar and monopolar regimes of conductivity are obtained and analyzed, for different temperatures and gate voltages. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3431353]

引用

页数：5

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