The Pseudocapacitive Nature of CoFe2O4 Thin Films

被引:116
作者
Sagu, Jagdeep S. [1 ]
Wijayantha, K. G. U. [1 ]
Tahir, Asif A. [2 ]
机构
[1] Loughborough Univ, Dept Chem, Energy Res Lab, Loughborough LE11 3TU, Leics, England
[2] Univ Exeter Penryn, Environm & Sustainabil Inst, Penryn TR10 9FE, Cornwall, England
基金
英国工程与自然科学研究理事会;
关键词
Supercapacitor; Pseudocapacitance; Thin film; Metal oxide; ELECTROCHEMICAL PERFORMANCE; ELECTRICAL-PROPERTIES; ELECTRODE MATERIALS; MAGNETIC-PROPERTIES; CHEMICAL-SYNTHESIS; FACILE SYNTHESIS; NANO-FLAKES; FERRITE; NANOPARTICLES; COMPOSITE;
D O I
10.1016/j.electacta.2017.06.110
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Nanostructured Cobalt ferrite (CoFe2O4) thin films are fabricated by aerosol-assisted chemical vapour deposition (AACVD) and studied for application in supercapacitors. XRD and Raman spectroscopic analysis confirms the formation of single phase CoFe2O4. SEM analysis shows that the thin film morphology consists of nanoparticles less than 100 nm in size that are sintered together to form larger dendrites raised from the substrate. The larger dendrites range from 0.5-1 mu m in diameter and are uniformly distributed over the FTO substrate, providing a highly porous structure which is desired for supercapacitor electrodes. Three-electrode electrochemical measurements reveal that CoFe2O4 is pseudocapacitive and is highly conducting. Studies of CoFe2O4 thin films in two-electrode symmetric supercapacitor configuration show a capacitance of 540 mu F cm(-2) and a relaxation time constant of 174 ms. Around 80% of the capacitance is retained after 7000 charge-discharge cycles when a maximum charging voltage of 1 V was used, indicating that the pseudocapacitive processes in CoFe2O4 are highly reversible and that it exhibits excellent chemical stability in 1 M NaOH alkaline electrolyte solution. The results show that CoFe2O4 is a cheap and promising alternative pseudocapacitive material to replace the expensive pseudocapacitive materials. (C) 2017 The Authors. Published by Elsevier Ltd.
引用
收藏
页码:870 / 878
页数:9
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