Effect of very low to high Sb-doping on the structural, electrical, photo-conductive and thermoelectric properties of fluorine-doped SnO2 (FTO) thin films prepared by spray pyrolysis technique

被引:3
作者
Mokaripoor, E. [1 ]
Bagheri-Mohagheghi, M. -M. [1 ,2 ]
机构
[1] Damghan Univ, Sch Phys, Damghan, Iran
[2] POB 91375-3889, Mashhad, Iran
关键词
Carrier concentration - Energy gap - Fluorine - Glass substrates - Conductive films - Semiconductor doping - Crystal impurities - Incident light - Nanocrystals - Photoconductivity - Crystal orientation - Spray pyrolysis;
D O I
10.1007/s10854-015-4026-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Transparent conducting fluorine and Sb-doped [SnO2:(F,Sb)] thin films have been deposited onto preheated glass substrates using the spray pyrolysis technique by the various dopant quantity of spray solution. The effect of antimony impurities on the structural, morphological, electrical, Thermo-electrical, optical and photoconductive properties of films has been investigated. The [F/Sn] atomic concentration ratio (x) in the spray solution is kept at value of 0.7 and the [Sb/Sn] atomic ratio (y) varied at values of 0, 0.0005, 0.001, 0.002, 0.01, 0.03, 0.05, 0.07 and 0.10. It is found that the films are polycrystalline in nature with a tetragonal crystal structure corresponding to SnO2 phase having orientation along the (110) and (200) planes. SEM images indicated that nanostructure of the films has a particle type growth. The average grain size increases with increasing spraying quantity of Sb-dopant. The compositional analysis of SnO2: (F, Sb) thin films were studied using EDAX. SEM and AFM study reveals the surface of SnO2: (F, Sb) to be made of nanocrystalline particles. The Hall Effect measurements have shown n-type conductivity in all deposited films. The lowest sheet resistance and highest the carrier concentration about 7.7 Omega/square and 6.6 x 10(22), respectively, were obtained for the film deposited with y = [Sb/Sn] = 0.001 and x = [F/Sn] = 0.7. The maximum of the Seebeck coefficient equal to 12.8 mu V K-1 was obtained at 400 K for the film deposited with y = [Sb/Sn] = 0.10. The average transmittance of films varied over the range 10-80 % with change of Sb-concentration. The band gap values of samples were obtained in the range of 3.19-3.8 eV. From the photoconductive studies, the Sb-doped films exhibited sensitivity to incident light especially in y = 0.001. The electrical resistivity and carrier concentration vary in range 5.44 x 10(-4) to 1.02 x 10(-2)Omega cm and 2.6 x 10(22)-6.6 x 10(22) cm(-3), respectively.
引用
收藏
页码:2305 / 2314
页数:10
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