A revised model for carrier trapping-detrapping 1/f noise

The model presented here is an extension of the carrier trapping-detrapping model for 1/f noise, in semiconductor devices with interfaces formed by oxide or insulating layers. The validity of the conventional assumptions, currently used to explain trapping-detrapping 1/f noise, is discussed and a revised set of assumptions is proposed. It is shown that 1/f noise that is caused by election trapping and detrapping at oxide interfaces, can be explained for a wide variety of activation barrier distributions, assuming the revised set of assumptions. (C) 1997 Elsevier Science Ltd.