Process integration of CVD Cu seed using ALD Ru glue layer for sub-65nm Cu interconnect

被引：0

作者：

Choi, SM ^{[1
]}

Park, KC ^{[1
]}

Suh, BS ^{[1
]}

Kim, IR ^{[1
]}

Kang, HK ^{[1
]}

Suh, KP ^{[1
]}

Park, HS ^{[1
]}

Ha, JS ^{[1
]}

Joo, DK ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, Adv Proc Dev Project Team, Syst LSI Div, Yongin 449711, South Korea

来源：

2004 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2004年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Chemical-vapor-deposited(CVD) Cu film was successfully demonstrated as a seed layer for Cu electroplating, by using atomic-layer-deposited(ALD) Ru as a glue layer on ALD WNC barrier metal. Low via resistance of below 3Omega/via was obtained in 0.13mum via chains, which was built in SiOC (k=2.9) inter-metal dielectric. The adhesion between WNC and CVD Cu, estimated by mELT, was significantly improved by the insertion of ALD Ru and HR-XTEM analysis showed no interfacial layers at both Cu/Ru and Ru/WNC interfaces. In addition, Ru was found to promote the 2-D planar growth of CVD Cu film rather than the 3-D island growth.

引用

页码：64 / 65

页数：2

共 5 条

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