Hydrogen-dopant interactions in SiGe and strained Si

被引：5

作者：

Tsetseris, L. ^{[1
,2
]}

Fleetwood, D. M. ^{[3
]}

Schrimpf, R. D. ^{[3
]}

Pantelides, S. T. ^{[2
,4
]}

机构：

[1] Natl Tech Univ Athens, Dept Phys, GR-15780 Athens, Greece

[2] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA

[3] Vanderbilt Univ, Dept Elect & Comp Sci, Nashville, TN 37235 USA

[4] Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 25期

关键词：

ab initio calculations; electron traps; elemental semiconductors; Ge-Si alloys; hole traps; hydrogen; impurities; internal stresses; semiconductor doping; silicon; AUGMENTED-WAVE METHOD; CRYSTALLINE SILICON; MICROSCOPIC STRUCTURE; MOS DEVICES; SEMICONDUCTORS; RELIABILITY; DIFFUSION; COMPLEX; BIAS;

D O I：

10.1063/1.3456395

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The appearance of carrier traps and the deactivation of dopants are typical hydrogen-related phenomena that are of prime importance to the reliability of traditional Si-based devices. Here we probe with first-principles calculations, the dynamics of hydrogen as individual impurities or in complexes with dopants in strained Si (s-Si) and SiGe systems. We find that the charged state determines the tendency of hydrogen to be released from dopant sites and to shuttle between a SiGe substrate and a s-Si overlayer. In this way, the effect of hydrogen differs between accumulation and inversion cycles of s-Si and SiGe devices. (C) 2010 American Institute of Physics. [doi:10.1063/1.3456395]

引用

页数：3

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