Effect of humidity on hydrogen sensitivity of Pt-gated AlGaN/GaN high electron mobility transistor based sensors

被引：35

作者：

Lo, C. F. ^{[1
]}

Chang, C. Y. ^{[1
]}

Chu, B. H. ^{[1
]}

Pearton, S. J. ^{[2
]}

Dabiran, A. ^{[3
]}

Chow, P. P. ^{[3
]}

Ren, F. ^{[1
]}

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[3] SVT Associates, Eden Prairie, MN 55344 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 23期

关键词：

GAN; OXIDATION; PD/GAN;

D O I：

10.1063/1.3454279

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of relative humidity on sensing characteristics of Pt-gated AlGaN/GaN high electron mobility transistor diode based hydrogen sensors were investigated. The absorbed water and oxygen molecules blocked available Pt surface adsorption sites for H-2 absorption and reduced the hydrogen sensing sensitivity compared to low humidity conditions. The hydrogen sensing sensitivity decreased proportional to the relative humidity. However, the presence of humidity improved the sensor recovery characteristics after exposure to the hydrogen ambient. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3454279]

引用

页数：3

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