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Light-induced defects in KTaO3
被引:35
|作者:
Laguta, VV
[1
]
Glinchuk, MD
Bykov, IP
Cremona, A
Galinetto, P
Giulotto, E
Jastrabik, L
Rosa, J
机构:
[1] NASc Ukraine, Inst Problems Mat Sci, UA-03142 Kiev, Ukraine
[2] Univ Pavia, Dipartimento Fis A Volta, I-27100 Pavia, Italy
[3] INFM, I-27100 Pavia, Italy
[4] AS CR, Inst Phys, Prague 18221 8, Czech Republic
关键词:
D O I:
10.1063/1.1568527
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
Photoconductivity (PC), thermally stimulated conductivity (TSC), photoluminescence (PL), thermoluminescence (TL), and electron spin resonance (ESR) measurements have been made on single crystals of potassium tantalate over the temperature range 4.2-290 K. We revealed two sorts of O- shallow hole centers which are responsible for the two temperature regions of PL and PC enhancement: T<70 K and 100-150 K. Both O- centers were identified by their ESR spectra. While at low temperatures PL and PC have a rather intrinsic origin, i.e., they do not depend essentially on the sort or quality of crystals, at 100-150 K both quantities strongly depend on the defect content and vanish in well-oxidized crystals. We show that O- centers serve as radiative electron-hole recombination centers. Their energy levels are situated at 0.08 and 0.16 eV above the top of the valence band. Measurements of TSC and TL after UV irradiation revealed several glow peaks at temperatures 18-30 K and 65-70 K. There is a good correlation between TSC and TL intensity in different samples as well as after annealing in O-2 and H-2 atmospheres. Because electrons are mobile species in KTaO3, we attribute both TSC and TL to the thermal ionization of the same shallow donor centers related with isolated oxygen vacancies. The experimental data were treated in a one-trap/one-recombination center model, which takes into account the presence of "thermally disconnected" deep electron traps. (C) 2003 American Institute of Physics.
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页码:6056 / 6064
页数:9
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