Partly three-dimensional calculation of silicon Czochralski growth with a transverse magnetic field

被引：6

作者：

Kakimoto, Koichi ^{[1
]}

Liu, Lijun ^{[1
]}

机构：

[1] Kyushu Univ, Res Inst Appl Mech, Kasuga, Fukuoka 8168580, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 303卷 / 01期

关键词：

computer simulation; magnetic fields; magnetic field assisted Czochralski method; semiconducting silicon;

D O I：

10.1016/j.jcrysgro.2006.11.152

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A three-dimensional (3D) global model is required for investigating temperature distribution in a crystal in a Czochralski (CZ) furnace for silicon crystal growth. We succeeded in constructing a code in which the 3D configuration of the furnace is partly taken into account. Convective, conductive and radiative heat transfer in the furnace are solved simultaneously by a finite control-volume method. The model enables us to carry out 3D global simulations with moderate requirements of computer memory and computation time. Some results obtained by using the partly 3D global model for small silicon CZ growth in a transverse magnetic field are presented. Results for oxygen transfer in the melt of TMCZ are also presented. (C) 2006 Elsevier B.V. All rights reserved.

引用

页码：135 / 140

页数：6

共 19 条

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