Synthesis and Properties of Bismuth Selenide Based Nanolaminates for Application in Thermoelectrics

被引：4

作者：

Andzane, Jana ^{[1
]}

Felsharuk, Andrei ^{[1
]}

Buks, Krisjanis ^{[1
]}

Sarakovskis, Anatolijs ^{[2
]}

Niherysh, Kiryl ^{[1
]}

Gabrusenoks, Jevgenijs ^{[2
]}

Erts, Donats ^{[1
,3
]}

机构：

[1] Univ Latvia, Inst Chem Phys, Raina Blvd 19, LV-1586 Riga, Latvia

[2] Univ Latvia, Inst Solid State Phys, Kengaraga Str 8, LV-1063 Riga, Latvia

[3] Univ Latvia, Fac Chem, Raina Blvd 19, LV-1586 Riga, Latvia

来源：

ADVANCED MATERIALS INTERFACES | 2022年 / 9卷 / 21期

关键词：

bismuth selenide; doping; nanolaminate; physical vapor deposition; thermoelectric properties; ultrathin films; TOPOLOGICAL INSULATOR; THERMAL-CONDUCTIVITY; BI2SE3; DEPOSITION; ANTIMONY; SEEBECK; FIGURE; BI2TE3; FILMS; MERIT;

D O I：

10.1002/admi.202200385

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this work, simple and cost-effective phyiscal vapor deposition method is applied for deposition of single Bi2Se3, Bi1.925Sn0.075Se3, Bi2Se2.975Te0.025 ultrathin films of average thickness 10-12 nm, and for the fabrication of n-type 5-layer nanolaminates. The nanolaminates are composed from alternating doped and undoped ultrathin films. Electrical and thermoelectric properties (Seebeck coefficient, resistivity, electron thermal conductivity, charge carrier concentration, and mobility) of nanolaminates as well as single ultrathin undoped and doped films are studied at room temperature under ambient conditions. Both types of nanolaminates show 75-125% increase of the Seebeck coefficient accompanied by the 65-85% reduction of the electron thermal conductivity in comparison with the nanostructured bulk materials of similar chemical compositions. The mechanisms underlying such improvement of properties of studied nanolaminates in comparison with the nanostructured bulk counterparts are discussed.

引用

页数：7

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