Enhanced magneto-electrical properties and room temperature magnetoresistance in lightly doped manganite thin films

被引：9
作者：
Prasad, Ravikant
Singh, M. P.
Siwach, P. K.
Prellier, W.
Singh, H. K.
机构：
[1] Natl Phys Lab, New Delhi 110012, India
[2] ENSICAEN, Lab CRISMAT, UMR 6508, Caen, France
[3] UGC, DAE, Consortium Sci Res, Indore 452001, India
来源：
SOLID STATE COMMUNICATIONS | 2007年 / 142卷 / 08期
关键词：
manganite thin film; DC-sputtering; strain effect; magnetoresistance;
D O I：
10.1016/j.ssc.2007.03.030
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We report the effect of compressive strain on magnetic and magneto-electrical properties of lightly doped manganite La0.88Sr0.12MnO3 thin films. Films, having 5-60 nm thickness, were grown on (001) LaAlO3 and (001) SrTiO3 substrate by DC-magnetron sputtering. These films show a magnetoresistance as high as similar to 65% at room temperature and insulator-metal transition temperature (T-IM) similar to 320 K. Further, we demonstrate that a small variation in strain causes significant changes in their properties. We have discussed the possible origin of these features and compared with the reported literature. (c) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码：445 / 448
页数：4
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