Enhancement of thermoelectric properties by Na doping in Te-free p-type AgSbSe2

被引：40

作者：

Cai, Songting ^{[1
]}

Liu, Zihang ^{[1
]}

Sun, Jianyong ^{[1
]}

Li, Rui ^{[1
]}

Fei, Weidong ^{[1
]}

Sui, Jiehe ^{[1
]}

机构：

[1] Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China

来源：

DALTON TRANSACTIONS | 2015年 / 44卷 / 03期

基金：

中国国家自然科学基金;

关键词：

PERFORMANCE; FIGURE; MERIT; DISTORTION; PBTE; PBS;

D O I：

10.1039/c4dt03059a

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

AgSbSe2 possesses extremely low thermal conductivity and high Seebeck coefficient, but the low electronic conductivity leads to a low ZT value. In this paper, Na is used to substitute Sb to improve the electronic conductivity. The results show that Na doping not only improves the power factor caused by the enhanced carrier concentration, but also decreases the thermal conductivity due to point defects, nanoscale stacking faults and Na-rich precipitate. Consequently, a high ZT value of 0.92 is achieved in the AgSb0.99Na0.01Se2 sample.

引用

页码：1046 / 1051

页数：6

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