MOCVD growth of MgSe thin films on GaAs substrates

被引:18
作者
Jiang, FY [1 ]
Liao, QH [1 ]
Fan, GH [1 ]
Xiong, CB [1 ]
Peng, XX [1 ]
Pan, CK [1 ]
Liu, NH [1 ]
机构
[1] Nanchang Univ, Inst Mat Sci, Nanchang 330047, Peoples R China
基金
中国国家自然科学基金;
关键词
MgSe; zincblende; MOCVD;
D O I
10.1016/S0022-0248(97)00426-0
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
MgSe thin films have been grown by metal-organic chemical vapor deposition on GaAs substrates. Our experimental results show that the crystal structure of MgSe depends strongly on both the growth temperature and the substrate orientation. Using the X-ray diffraction technique, we observed the three phases of MgSe; the rock salt, wurtzite and zincblende structures. The lattice constant of zincblende MgSe was determined to be 5.96 Angstrom. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:289 / 293
页数:5
相关论文
共 13 条
[1]  
[Anonymous], 1967, NBS MON, V25
[2]  
BROCH, 1927, Z PHYS CHEM-LEIPZIG, V127, P446
[3]  
BROSER I, 1982, LANDOLTBORNSTEIN B, V117
[4]   DOPING IN ZNSE, ZNTE, MGSE, AND MGTE WIDE-BAND-GAP SEMICONDUCTORS [J].
CHADI, DJ .
PHYSICAL REVIEW LETTERS, 1994, 72 (04) :534-537
[5]  
DONNAY JH, INORGANIC COMPOUNDS, V2
[6]   BLUE-GREEN LASER-DIODES [J].
HAASE, MA ;
QIU, J ;
DEPUYDT, JM ;
CHENG, H .
APPLIED PHYSICS LETTERS, 1991, 59 (11) :1272-1274
[7]   Epitaxy of Zn1-xMgxSeyTe1-y on (100)InAs [J].
Litz, MT ;
Watanabe, K ;
Korn, M ;
Ress, H ;
Lunz, U ;
Ossau, W ;
Waag, A ;
Landwehr, G ;
Walter, T ;
Neubauer, B ;
Gerthsen, D ;
Schussler, U .
JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) :54-57
[8]   RONTGENOGRAPHISCHE UND OPTISCHE UNTERSUCHUNGEN AUFGEDAMPFTER SCHICHTEN AUS ERDALKALICHALKOGENIDEN [J].
MITTENDO.H .
ZEITSCHRIFT FUR PHYSIK, 1965, 183 (02) :113-&
[9]   EPITAXIAL-GROWTH OF ZNMGSSE ON GAAS SUBSTRATE BY MOLECULAR-BEAM EPITAXY [J].
OKUYAMA, H ;
NAKANO, K ;
MIYAJIMA, T ;
AKIMOTO, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (9B) :L1620-L1623
[10]   ZNSE/ZNMGSSE BLUE LASER DIODE [J].
OKUYAMA, H ;
MIYAJIMA, T ;
MORINAGA, Y ;
HIEI, F ;
OZAWA, M ;
AKIMOTO, K .
ELECTRONICS LETTERS, 1992, 28 (19) :1798-1799