Characterization of Infrared Photodetectors Prepared by Dip Coating of Porous Silicon with Multi-Walled Carbon Nanotubes

被引：0

作者：

Hameed, Mohammed A. ^{[1
]}

机构：

[1] Univ Baghdad, Coll Sci, Dept Phys, Baghdad, Iraq

来源：

NONLINEAR OPTICS QUANTUM OPTICS-CONCEPTS IN MODERN OPTICS | 2019年 / 51卷 / 3-4期

关键词：

MWCNTs; porous silicon; dip coating; infrared photodetectors; MAGNETRON; OPTIMIZATION; GROWTH;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this work, dip coating technique was used to synthesize multi-walled carbon nanotubes (MWCNTs) on porous silicon (PS) thin layers prepared on photochemical etched silicon substrates. These structures (MWCNTs/ PS) have exhibited good photoconductive gain, acceptable photoresponsivity and response time. The surfaces of these structures were covered by polyamide layer to improve these characteristics. These structures were characterized as infrared photodetectors.

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页码：213 / 222

页数：10

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