Design and Implementation of 1.5 kW Half Bridge Bidirectional DC-DC Converter based on Gallium Nitride devices

被引：3

作者：

Gurudiwan, Shubhangi ^{[1
]}

Roy, Shamibrota Kishore ^{[1
]}

Basu, Kaushik ^{[1
]}

机构：

[1] Indian Inst Sci, Bangalore, Karnataka, India

来源：

2019 NATIONAL POWER ELECTRONICS CONFERENCE (NPEC) | 2019年

关键词：

Gallium nitride (GaN); little box challenge (LBC); high electron mobility transistor (HEMT); silicon carbide (SiC); two dimensional electron gas (2DEG);

D O I：

10.1109/npec47332.2019.9034802

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Use of wide band gap devices such as SiC MOSFET and GaN HEMT in a converter results in high power density and high efficiency as compared to state of the art Si switches. The objective of this work is to build a 350V DC (input), 1.5kW buck converter with switching frequency 100kHz. Commercially available GaN devices are compared based on performance in terms of package, conduction and switching losses. The module achieves more than 97% efficiency at all values of the current.

引用

页数：6

共 7 条

[1]

Bharadwaj P., 2016, 2016 IEEE INT C POWE, P1, DOI 10.1109/PEDES.2016.7914240

[2]

Kim Katherine A., 2017, CPSS Transactions on Power Electronics and Applications, V2, P131, DOI 10.24295/CPSSTPEA.2017.00013

[3] Understanding the Effect of PCB Layout on Circuit Performance in a High-Frequency Gallium-Nitride-Based Point of Load Converter [J].