Effects of Thermal Annealing on the Electrical Properties of Si-implanted Large Diameter SI-GaAs

被引：0

作者：

Wang Na ^{[1
]}

Hao Qiuyan ^{[1
]}

Sun Weizhong ^{[1
]}

Wu Dan ^{[1
]}

Liu Caichi ^{[1
]}

机构：

[1] Hebei Univ Technol, Inst Informat Funct Mat, Tianjin 300130, Peoples R China

来源：

PROCEEDINGS OF 2ND INTERNATIONAL SYMPOSIUM ON PHYSICS AND HIGH-TECH INDUSTRY, 4TH INTERNATIONAL SYMPOSIUM ON MAGNETIC INDUSTRY, 1ST SHENYANG FORUM FOR DEVELOPMENT AND COOPERATION OF HIGH-TECH INDUSTRY IN NORTHEAST ASIA | 2009年

关键词：

EL2;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of rapid thermal annealing on the electrical properties of Si-implanted large diameter semi-insulating GaAs with the growth methods of Liquid Encapsulated Crochizoski (LEC) have been investigated by Hall system. The results showed that the electrical activity of Si-implanted GaAs annealed at 900 degrees C is the highest. Conductive type changes from n-type to p-type when the annealing temperature is higher than 950 degrees C.

引用

页码：247 / 248

页数：2

共 5 条

[1] EFFECTS OF CONTROLLED AS PRESSURE ANNEALING ON DEEP LEVELS OF LIQUID-ENCAPSULATED CZOCHRALSKI GAAS SINGLE-CRYSTALS [J].

CHICHIBU, S ;

OHKUBO, N ;

MATSUMOTO, S .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (08) :3987-3993

[2] Identification of arsenic antisite defects with EL2 by nanospectroscopic studies of individual centers [J].

Hida, A ;

Mera, Y ;

Maeda, K .

PHYSICA B-CONDENSED MATTER, 2001, 308 (308-310) :738-741

[3]

Liu Li-Feng, 2001, Journal of Hebei University of Technology, V30, P35

[4] MODEL OF EL2 FORMATION IN GAAS [J].

MORROW, RA .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (11) :6782-6789

[5] ENERGETICS OF SELF-DIFFUSION IN GAAS [J].

WAGER, JF .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (05) :3022-3031

← 1 →