Electronic structure of the Pb/Si(111)-(√7x√3) surface reconstruction: A first-principles study

被引：12
|
作者：
Hsu, Chia-Hsiu [1 ]
Chuang, Feng-Chuan [1 ]
Albao, Marvin A. [2 ]
Yeh, V. [3 ]
机构：
[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan
[2] Univ Philippines Los Banos, Inst Math Sci & Phys, Laguna 4031, Philippines
[3] Natl Dong Hwa Univ, Dept Phys, Hualien 97401, Taiwan
来源：
PHYSICAL REVIEW B | 2010年 / 81卷 / 03期
关键词：
PHASE-TRANSITION; PB/SI(111); INTERFACE; STM;
D O I：
10.1103/PhysRevB.81.033407
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Electronic structures of the Pb/Si(111)-(root 7x root 3) surface reconstruction were reexamined using first-principles calculations. The band structures of the proposed models were analyzed in detail. Our results show that the calculated bands for the H3 model at lead coverage of 1.2 ML are in good agreement with the identified bands in the angle-resolved photoemission study [Phys. Rev. B 75, 075329 (2007)]. Lastly, the work functions of the root 7x root 3 and root 3x root 3 phases were also calculated and compared with experimental measurements.
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页数：4
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