φ60,1000 μm Si-PIN detectors for pulsed γ flux measurement

Using high-resistivity (10000-20000 Omega (.) cm) n-type Si wafers, we have developed phi 60 PIN semiconductor detector with depletion thickness similar to 1000 microns for low-intensity pulsed gamma-ray flux measurement. For determination of thickness of the depletion depths, a recoil proton chamber with 20 degrees scattering angle has been constructed. The detector's performance have been measured and analyzed, which indicates that the developed detector satisfactorily meets the expected specifications. Compared with the existing detectors with depletion depths of 200-300 microns, the detector has, much greater gamma detecting sensitivity and suited for measuring pulsed gamma-ray flux in low-intensity mixed gamma/n fields.