Influence of Sputtering Power on the Electrical Properties of In-Sn-Zn Oxide Thin Films Deposited by High Power Impulse Magnetron Sputtering

被引：7

作者：

Li, Zhi-Yue ^{[1
,2
,3
,4
]}

Chen, Sheng-Chi ^{[3
,4
,5
]}

Huo, Qiu-Hong ^{[1
]}

Liao, Ming-Han ^{[6
]}

Dai, Ming-Jiang ^{[7
]}

Lin, Song-Sheng ^{[7
]}

Yang, Tian-Lin ^{[1
]}

Sun, Hui ^{[1
]}

机构：

[1] Shandong Univ Weihai, Sch Space Sci & Phys, Shandong Prov Key Lab Opt Astron & Solar Terr Env, Weihai 264209, Peoples R China

[2] Southern Univ Sci & Technol, Shenzhen Key Lab Quantum Sci & Engn, Shenzhen 518055, Guangdong, Peoples R China

[3] Ming Chi Univ Technol, Dept Mat Engn, Taipei 243, Taiwan

[4] Ming Chi Univ Technol, Ctr Plasma & Thin Film Technol, Taipei 243, Taiwan

[5] Chang Gung Univ, Coll Engn, Taoyuan 333, Taiwan

[6] Natl Taiwan Univ, Dept Mech Engn, Taipei 106, Taiwan

[7] Guangdong Inst New Mat, Key Lab Guangdong Modern Surface Engn Technol, Natl Engn Lab Modern Mat Surface Engn Technol, Guangzhou 510651, Guangdong, Peoples R China

来源：

COATINGS | 2019年 / 9卷 / 11期

关键词：

ITZO film; high power impulse magnetron sputtering; sputtering power; electrical properties; AL-DOPED ZNO; ZINC-OXIDE; OPTOELECTRONIC PROPERTIES; OPTICAL-PROPERTIES;

D O I：

10.3390/coatings9110715

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In-Sn-Zn oxide (ITZO) thin films have been studied as a potential material in flat panel displays due to their high carrier concentration and high mobility. In the current work, ITZO thin films were deposited on glass substrates by high-power impulse magnetron sputtering (HiPIMS) at room temperature. The influence of the sputtering power on the microstructures and electrical performance of ITZO thin films was investigated. The results show that ITZO thin films prepared by HiPIMS were dense and smooth. There were slight variations in the composition of ITZO thin films deposited at different sputtering powers. With the sputtering power increasing from 100 W to 400 W, the film's crystallinity was enhanced. When the sputtering power was 400 W, an In2O3 (104) plane could be detected. Films with optimal electrical properties were produced at a sputtering power of 300 W, a carrier mobility of 31.25 cm(2).V-1.s(-1), a carrier concentration of 9.11 x 10(18) cm(-3), and a resistivity of 2.19 x 10(-4) Omega.m.

引用

页数：9

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