Short-period InAs/GaSb superlattices for mid-infrared photodetectors

被引：11

作者：

Haugan, H. J. ^{[1
]}

Szmulowicz, F. ^{[1
]}

Brown, G. J. ^{[1
]}

Ullrich, B. ^{[2
]}

Munshi, S. R. ^{[1
]}

Wickett, J. C. ^{[3
]}

Stokes, D. W. ^{[3
]}

机构：

[1] USAF, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA

[2] Bowling Green State Univ, Dept Phys & Astron, Wright Patterson AFB, OH 45433 USA

[3] Univ Houston, Dept Phys, Houston, TX 77204 USA

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 5 | 2007年 / 4卷 / 05期

关键词：

D O I：

10.1002/pssc.200674250

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using a newly developed envelope function approximation model that includes interface effects, several InAs/GaSb type-II superlattices (SLs) were designed for uncooled mid-infrared detector applications. The 4 micron cutoff could be achieved with several SL designs. Superlattices with shorter periods have larger intervalence band separations than larger-ones, which could increase the optical signal and reduce the detector noise, thus making room temperature operation possible. To test these possibilities, several short-period SLs were grown by molecular-beam epitaxy and their optical properties with reducing SL period were studied by band-edge absorption, photoconductivity and photoluminescence measurements. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1702 / +

页数：3

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