Nitrogen Related Electron Trap with High Capture Cross Section in n-Type GaAsN Grown by Chemical Beam Epitaxy

被引：13

作者：

Bouzazi, Boussairi ^{[1
]}

Suzuki, Hidetoshi ^{[1
]}

Kojima, Nobuaki ^{[1
]}

Ohshita, Yoshio ^{[1
]}

Yamaguchi, Masafumi ^{[1
]}

机构：

[1] Toyota Technol Inst, Tempa Ku, Nagoya, Aichi 4688511, Japan

来源：

APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 05期

关键词：

LEVEL TRANSIENT SPECTROSCOPY;

D O I：

10.1143/APEX.3.051002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A nitrogen-related electron trap, at around 0.3 eV from the conduction band minimum of n-type GaAsN grown by chemical beam epitaxy, is confirmed using deep level transient spectroscopy and nitrogen concentration dependence of its density. It has a high capture cross section and not observed in N free n-type GaAs. Furthermore, its density increases markedly with increasing N, persists to post thermal annealing, and found to be quasi-uniform distributed in the bulk of GaAsN. Based on first-principles calculation, the electron trap is associated with a split interstitial defect formed from N and As atoms on the same As lattice site (As-N) As. (C) 2010 The Japan Society of Applied Physics

引用

页数：3

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