Breakdown transients in ultrathin gate oxides: Transition in the degradation rate

被引：50

作者：

Lombardo, S

Stathis, JH

Linder, BP

机构：

[1] CNR, IMM, Sez Catania, I-95121 Catania, Italy

[2] IBM Corp, Div Res, Yorktown Hts, NY 10598 USA

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 90卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.90.167601

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report a sharp threshold at 4 V in the growth rate of breakdown spots in thin films of SiO2 on silicon. This provides some of the first information concerning the electronic structure of the breakdown spot.

引用

页数：4