Breakdown transients in ultrathin gate oxides: Transition in the degradation rate

被引：50
作者：
Lombardo, S
Stathis, JH
Linder, BP
机构：
[1] CNR, IMM, Sez Catania, I-95121 Catania, Italy
[2] IBM Corp, Div Res, Yorktown Hts, NY 10598 USA
来源：
PHYSICAL REVIEW LETTERS | 2003年 / 90卷 / 16期
关键词：
D O I：
10.1103/PhysRevLett.90.167601
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report a sharp threshold at 4 V in the growth rate of breakdown spots in thin films of SiO2 on silicon. This provides some of the first information concerning the electronic structure of the breakdown spot.
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页数：4
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