Determination of the polarization and strain distribution in AlGaN/GaN heterostructure field-effect transistors

被引：4
|
作者：
Yang, Ming [1 ]
Lv, Yuanjie [2 ]
Cui, Peng [1 ]
Liu, Yan [1 ]
Fu, Chen [1 ]
Lin, Zhaojun [1 ]
机构：
[1] Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China
[2] Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Hebei, Peoples R China
来源：
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2018年 / 123卷
基金：
中国国家自然科学基金;
关键词：
AlGaN/GaN HFETs; Polarization and strain distribution; Polarization coulomb field scattering; OHMIC CONTACTS; SCATTERING; SILICON; BIAS;
D O I：
10.1016/j.jpcs.2018.08.006
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
In AlGaN/GaN heterostructure field-effect transistors (HFETs), the polarization Coulomb field scattering is determined by the ionized surface states of the AlGaN barrier layer surface and the additional polarization charges at the AlGaN/GaN interface. Based on the experimentally obtained 2DEG electron mobility and taking into account several main scattering mechanisms, especially polarization Coulomb field scattering, an iterative calculation method is proposed to determine the polarization and strain distribution under different bias voltages in the fabricated AlGaN/GaN HFETs, and a relationship is presented to connect the additional polarization/strain, the voltage drop through the gate Schottky barrier, and the device size. Based on this relationship, the strain energy in the AlGaN barrier layer is analyzed, and it is found that the total strain energy remains approximately constant.
引用
收藏
页码：223 / 227
页数：5
相关论文
共 50 条
  • [21] Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors
    Cui, Peng
    Mo, Jianghui
    Fu, Chen
    Lv, Yuanjie
    Liu, Huan
    Cheng, Aijie
    Luan, Chongbiao
    Zhou, Yang
    Dai, Gang
    Lin, Zhaojun
    SCIENTIFIC REPORTS, 2018, 8
  • [22] Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors
    Peng Cui
    Jianghui Mo
    Chen Fu
    Yuanjie Lv
    Huan Liu
    Aijie Cheng
    Chongbiao Luan
    Yang Zhou
    Gang Dai
    Zhaojun Lin
    Scientific Reports, 8
  • [23] The role of polarization coulomb field scattering in the electron mobility of AlGaN/AlN/GaN heterostructure field-effect transistors
    Liu, Yan
    Lin, Zhaojun
    Zhao, Jingtao
    Yang, Ming
    Shi, Wenjing
    Lv, Yuanjie
    Feng, Zhihong
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2016, 68 (07) : 883 - 888
  • [24] GaN-AlGaN heterostructure field-effect transistors over bulk GaN substrates
    Khan, MA
    Yang, JW
    Knap, W
    Frayssinet, E
    Hu, X
    Simin, G
    Prystawko, P
    Leszczynski, M
    Grzegory, I
    Porowski, S
    Gaska, R
    Shur, MS
    Beaumont, B
    Teisseire, M
    Neu, G
    APPLIED PHYSICS LETTERS, 2000, 76 (25) : 3807 - 3809
  • [25] DC characteristics of AlGaN/GaN heterostructure field-effect transistors on freestanding GaN substrates
    Irokawa, Y
    Luo, B
    Ren, F
    Pan, CC
    Chen, GT
    Chyi, JI
    Park, SS
    Park, YJ
    Pearton, SJ
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2004, 7 (01) : G8 - G10
  • [26] GaN-AlGaN heterostructure field-effect transistors over bulk GaN substrates
    2000, American Institute of Physics Inc. (76)
  • [27] Enhanced effect of polarization on electron transport properties in AlGaN/GaN double-heterostructure field-effect transistors
    Maeda, Narihiko
    Saitoh, Tadashi
    Tsubaki, Kotaro
    Nishida, Toshio
    Kobayashi, Naoki
    2000, American Institute of Physics Inc. (76)
  • [28] Enhanced effect of polarization on electron transport properties in AlGaN/GaN double-heterostructure field-effect transistors
    Maeda, N
    Saitoh, T
    Tsubaki, K
    Nishida, T
    Kobayashi, N
    APPLIED PHYSICS LETTERS, 2000, 76 (21) : 3118 - 3120
  • [29] AlGaN/GaN heterostructure field effect transistors
    Maeda, N.
    Saitoh, T.
    Tsubaki, K.
    NTT R and D, 2001, 50 (01): : 8 - 17
  • [30] A method to determine the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN heterostructure field-effect transistors
    Zhao, Jingtao
    Lin, Zhaojun
    Luan, Chongbiao
    Chen, Quanyou
    Yang, Ming
    Zhou, Yang
    Lv, Yuanjie
    Feng, Zhihong
    SUPERLATTICES AND MICROSTRUCTURES, 2015, 79 : 21 - 28
12345