Simulation of n-β-FeSi2/p-Si heterojunction solar cells based on AFORS-HET

被引：3
|
作者：
Zou, Xin-Yao [1 ]
机构：
[1] Guangdong AIB Polytech Coll, Dept Mech & Elect, Guangzhou 510507, Guangdong, Peoples R China
来源：
MODERN PHYSICS LETTERS B | 2017年 / 31卷 / 19-21期
关键词：
beta-FeSi2; emitter; interface states density; conversion efficiency;
D O I：
10.1142/S0217984917400267
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Semiconducting thin beta-FeSi2 film has been recognized as a novel solar cell material due to its high absorption coefficient. In this study, the effects of emmiter on the photovoltaic properties of n-beta-FeSi2/p-Si were analyzed using AFORS_HET program. The simulation results show that the thickness of emitter affects the conversion efficiency of solar cell, and the short-current density decreases sharply with increasing thickness of emitter. Interface state is another key factor influencingt he conversion efficiency of solar cell, which degrades solar cell performance. In order to obtain high efficiency battery, interface state density should be less than 10(11) cm(-2) eV
引用
收藏
页数：5
相关论文
共 50 条
  • [31] P-SI/N-CDS HETEROJUNCTION SOLAR-CELLS
    HAYASHI, T
    NISHIKURA, T
    NISHIMURA, K
    EMA, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1989, 28 (07): : 1174 - 1177
  • [32] n-β-FeSi2/p-Si异质结太阳电池的计算机模拟
    许文英
    陈凤翔
    王嘉赋
    武汉理工大学学报, 2013, 35 (09) : 21 - 24+35
  • [33] Investigation of n-ZnO/p-Si and n-TiO2/p-Si Heterojunction Solar Cells: TCAD plus DFT
    Gulomov, Jasurbek
    Accouche, Oussama
    Aliev, Rayimjon
    Ghandour, Raymond
    Gulomova, Irodakhon
    IEEE ACCESS, 2023, 11 : 38970 - 38981
  • [34] Fabrication of p-Si/β-FeSi2 balls/n-si structures by MBE and their electrical and optical properties
    Suemasu, T
    Fujii, T
    Tanaka, M
    Takakura, K
    Iikura, Y
    Hasegawa, F
    JOURNAL OF LUMINESCENCE, 1998, 80 (1-4) : 473 - 477
  • [35] Analyses of Responsivity and Quantum Efficiency of p-Si/i-β-FeSi2/n-Si Photodiodes
    Huang, Jung-Sheng
    Lee, Kuan-Wei
    Huang, Cheng-Yao
    Wang, Shih-Feng
    SENSORS AND MATERIALS, 2018, 30 (04) : 925 - 932
  • [36] Fabrication of p-Si/β-FeSi2 balls/n-si structures by MBE and their electrical and optical properties
    Institute of Materials Science, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan
    J Lumin, 1-4 (473-477):
  • [37] Photoluminescence decay time and electroluminescence of p-Si/Β-FeSi2 particles/n-Si and p-Si/Β-FeSi2 film/n-Si double-heterostructures light-emitting diodes grown by molecular-beam epitaxy
    Suemasu, T.
    Ugajin, Y.
    Murase, S.
    Sunohara, T.
    Suzuno, M.
    Journal of Applied Physics, 2007, 101 (12):
  • [38] Photoluminescence decay time and electroluminescence of p-Si/β-FeSi2 particles/n-Si and p-Si/β-FeSi2 film/n-Si double-heterostructures light-emitting diodes grown by molecular-beam epitaxy
    Suemasu, T.
    Ugajin, Y.
    Murase, S.
    Sunohara, T.
    Suzuno, M.
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (12)
  • [39] Low Frequency Noise in Polycrystalline p-β-FeSi2/Ge Heterojunction Solar Cells
    Bag, A.
    Mukherjee, C.
    Mallik, S.
    Maiti, C. K.
    PROCEEDINGS OF THE 2013 20TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2013), 2013, : 377 - 380
  • [40] Necessity of Epitaxial Growth of β-FeSi2 Thin Films in Formation of n-Type β-FeSi2/p-Type Si Heterojunction Photodiodes
    Iwasaki, R.
    Promros, N.
    Yamashita, K.
    Izumi, S.
    Funasaki, S.
    Shaban, M.
    Yoshitake, T.
    LOW-DIMENSIONAL NANOSCALE ELECTRONIC AND PHOTONIC DEVICES 5 -AND- STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 54 (SOTAPOCS 54), 2012, 50 (06): : 157 - 162
12345